Magnetron sputtering apparatus and process
US4851095A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1988 |
| Grant date | Jul 25, 1989 |
| Priority date | — |
| Expiry date | Feb 8, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter cathode and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated cathode and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.