Apparatus for repairing a pattern film
US4851097A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 1987 |
| Grant date | Jul 25, 1989 |
| Priority date | — |
| Expiry date | Dec 24, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3056
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an apparatus for repairing a pattern film of a photomask, reticle, X-ray mask, semiconductor, etc. In the apparatus, a focused ion beam is applied to an excess portion of a pattern film which is formed on a substrate. The excess portion of the pattern film is removed by means of ion sputtering. For repairing an excess portion of the pattern film, an etching gas is provided to a position that is being irradiated with the scanning focused ion beam thereby increasing the reliability of repairing and carrying out repair of the excess portion of the pattern film with good quality. Further, the removal speed of the excess portion film is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.