Method and device for forming diamond film
US4851254A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 1988 |
| Grant date | Jul 25, 1989 |
| Priority date | — |
| Expiry date | Jan 11, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A device for forming a diamond film has a casing in which a vacuum is maintained to 50 Torr: a positive electrode and a negative electrode are disposed within the casing so that ends of the positive electrode and the negative electrode are opposed to each other through a space: a substrate is disposed near the space between the electrodes, a gas inlet pipe supplies a mixture gas of hydrogen, argon and methane to the space between the electrodes and an arc power supply is connected to the electrodes for supplying a predetermined arc output power thereacross to form an arc discharge column in the space therebetween. By supplying the mixture gas to the arc discharge column of which the temperature is extremely high, the mixture gas is decomposed at a high rate, and a diamond film of high purity grows on the substrate at a high speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.