Method of producing an electrical resistor by implanting a semiconductor material with rare gas
US4851359A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1986 |
| Grant date | Jul 25, 1989 |
| Priority date | — |
| Expiry date | Dec 29, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/43
Abstract
The invention enables precise and reliable adjustment of the resistance of a resistor formed in a zone (16) of monocrystalline semiconductor material (11) in spite of the presence of a density gradient of electrically active ions at the periphery of the zone, as a result of the implantation of ions of rare gases (+) in the zone. Furthermore, when the standard method of producing a resistor in a polycrystalline semiconductor material is used, implanting rare gas ions in the resistive zone enables precise and reliable adjustment of the resistance. The invention also maintains the dimensions of the initially resistive zone, despite later annealing, and is suitable for large-scale integration of circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.