Semiconductor laser device
US4852111A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1987 |
| Grant date | Jul 25, 1989 |
| Priority date | — |
| Expiry date | Dec 15, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device comprising a substrate of a first conductivity type having a mesa; a first semiconductor layer of a second conductivity type which is formed on the upper surface of the substrate other than the mesa to form a flat plane including the top face of the mesa; a laser oscillation region which is formed on the flat plane and includes an active area for laser oscillation; and a multi-layer structure burying the laser oscillation region, the multi-layer structure comprising a high resistance layer formed on the first semiconductor layer and burying both sides of the laser oscillation region, and a second semiconductor layer of the first conductivity type formed on the high resistance layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.