Process for the preparation of mono-crystalline 3-5 semi-insulating materials by doping and use of the semi-insulating materials thus obtained
US4853077A · kind A · utility
3Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1987 |
| Grant date | Aug 1, 1989 |
| Priority date | — |
| Expiry date | Apr 8, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/917
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a process for the preparation of mono-crystalline 3-5 semi-insulating materails by doping, characterized in that the starting charge of type .rho. is doped with at least one deep donor due to a transition element. It relates also to the use of the semi-insulating materials obtained in the fields of optoelectronics and of rapid electronics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.