Photoreceptor for electrophotography with a-Si layers having a gradient concentration of doped atoms and sandwiching the photoconductive layer therebetween
US4853309A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1988 |
| Grant date | Aug 1, 1989 |
| Priority date | — |
| Expiry date | Jun 3, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08257
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoreceptor for electrophotography including an electrically conductive substrate, a bottom layer, a photoconductive layer composed mainly of amorphous silicon, and a surface layer, in that order. Both the bottom and surface layers have a greater optical bandgap than said photoconductive layer. A first middle layer is disposed between said bottom layer and said photoconductive layer, and a second middle layer is disposed between said photoconductive layer and said surface layer. Both the first and second middle layers are composed mainly of amorphous silicon and have a concentration of doped atoms which varies from the bottom to the top of the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.