High voltage and power BiCMOS driving circuit
US4853559A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 1988 |
| Grant date | Aug 1, 1989 |
| Priority date | — |
| Expiry date | Jan 15, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/567
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This invention is related to an integrated driving circuit which can control high voltage and power, and more particularly to a high voltage and power driving circuit by employing BiCMOS technology. The principal object of this invention is to provide an integrated high voltage and high power driving circuit which is reliable by using BiCMOS technology without external discrete components. According to this invention, in the high voltage and power driving circuit using bipolar transistors and high voltage CMOS transistors, a high voltage and power driving circuit comprising: the current driving part composed of high voltage MOS transistor inverter and high current driving bipolar transistor 1 with the supply voltage of the certain multiple of breakdown voltage between collector and emitter of the bipolar transistor; the load driving part which drives the load with high current and high voltage of said certain multiple of the breakdown voltage which is composed of the high voltage MOS transistor inverter and the bipolar transistor 2; the reference voltage generation part which divides said certain multiple supply voltage into the breakdown voltages to prevent the bipolar transistors…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.