Temperature compensated bipolar circuits
US4853646A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1988 |
| Grant date | Aug 1, 1989 |
| Priority date | — |
| Expiry date | Jul 19, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/45479
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A temperature compensated ECL gate (20) with each gate circuit resistance formed by a pair of opposite polarity temperature coefficient resistors. A first gate transistor element (Q1) and a second gate transistor element (Q2) coupled at a common emitter coupling (12) provide alternative collector current paths from high potential (V.sub.cc) through a first gate transistor collector path with collector resistance (R11,R12) and a gate transistor collector path with collector resistance (R21,R22). A current source transistor element (Q3) is coupled between the common emitter coupling (12) of the gate transistor elements and low potential (V.sub.EE) through current source resistance (R31,R32). The resistances of the ECL gate each include a positive temperature coefficient silicon first resistor (R11,R21,R31) and a negative temperature coefficient low capacitance polysilicon second resistor coupled (R12,R22,R32) in series. The sum of the resistances of the first and second resistors is selected to providing the respective circuit resistance of the ECL gate and the ratio of the resistances of the first and second resistors is selected according to the temperture characteristics of the cu…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.