Resonant-tunneling device, and mode of device operation
US4853753A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1987 |
| Grant date | Aug 1, 1989 |
| Priority date | — |
| Expiry date | Nov 5, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/926
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure. Disclosed further are (two-terminal) resonant-tunneling diodes as incorporated in memory devices, e.g., in lieu of 2-transistsor flip-flops; room-temperature device operation; and devices comprising an essentially undoped accelerator region between an emitter contact and a resonant-tunneling structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.