Emissivity calibration apparatus and method
US4854727A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1987 |
| Grant date | Aug 8, 1989 |
| Priority date | — |
| Expiry date | Oct 26, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/80
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An improved method and apparatus are disclosed for calibrating the emissivity characteristics of a semiconductor wafer within a processing chamber by supporting a sample wafer on a graphite susceptor within the chamber and by comparing the temperature measured within the susceptor in close proximity to the center of the wafer with the temperature measured by the emission of radiation from the surface of the wafer through the walls of the processing chamber. Temperature measurements subsequently made from the radiation emitted from the surface of similar wafers are corrected with reference to the measurement made of the temperature within the susceptor on the sample wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.