Method for manufacturing semiconductor devices
US4855014A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 1987 |
| Grant date | Aug 8, 1989 |
| Priority date | — |
| Expiry date | Jan 23, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of manufacturing semiconductor devices, in which a monocrystalline thin film is formed by dissolving and recrystallizing either amorphous or polycrystalline thin film by annealing with energy beams, comprising the steps of: forming a compound film of a belt-shaped high melting point metal having a width narrower than the diameter of said energy beams and polycrystalline silicon, on said amorphous or polycrystalline thin film; causing said amorphous or polycrystalline thin film to contact with a monocrystalline substrate beneath the center line of said belt-shaped compound film at a position of more than 50 to 200 .mu.m remote from the end of the belt-shaped compound film in the scanning direction of said energy beams, with the contact shape being a tiny spot narrower than the width of the belt-shaped compound film; radiating said energy beams, penetrating through said belt-shaped compound film to scan parallel to the belt, starting from the vicinity of the end of the belt-shaped compound film, and inducing crystal growth of the amorphous or polycrystalline thin film beneath the belt-shaped compound film, starting from the monocrystals inheriting the crystallin…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.