Method of manufacturing masked semiconductor laser
US4855256A · kind A · utility
5Cited by
9References
9Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 12, 1988 |
| Grant date | Aug 8, 1989 |
| Priority date | — |
| Expiry date | Feb 12, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/169
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A masking layer is formed on the light-emitting mirror surface of a semiconductor laser body. The masking layer is capable of blocking light emitted from the semiconductor laser body and of being thermally melted and evaporated by exposure to the emitted light. When the masking layer is formed on the light-emitting mirror surface of the semiconductor laser body, a small light-emitting hole is defined in the masking layer by the heat of the emitted light which is effective to prevent the material of the masking layer from being evaporated on a portion of the light-emitting surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.