Modulation doped high electron mobility transistor with n-i-p-i structure

US4855797A · kind A · utility

Assignee

• Siemens Corporate Research & Support, Inc. · US

Inventors

• Erhard Kohn · Blaustein, DE
• Karl Robert Hofmann · Netphen, DE

Key dates

• Filing date: Jul 6, 1987
• Grant date: Aug 8, 1989
• Expiry date: Jul 6, 2007

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/824

Abstract

A modulation-doped field effect transistor includes an undoped semiconductor layer and an arrangement for supplying charge carriers into a region of the semiconductor layer adjacent one side. An arrangement is provided for locally modulating hole and electron density in another region adjacent the other side of the semiconductor layer in a repeating pattern of alternations so as to inhibit current flow in the direction of the alternations.