Nonlinear semiconductor element, liquid crystal display panel using the same and their manufacturing methods
US4855805A · kind A · utility
5Cited by
14References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1988 |
| Grant date | Aug 8, 1989 |
| Priority date | — |
| Expiry date | Jun 3, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a nonlinear semiconductor element which has a V-I characteristic of excellent origin symmetry and a liquid crystal display panel which employs such nonlinear semiconductor element. The nonlinear semiconductor has an n-i-n, n-i-p-i-n, or p-i-n-i-p type structure. The i-type semiconductor layer is intentionally doped with boron, which acts to make the i-type semiconductor layer more intrinsic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.