Impatt diode

US4857972A · kind A · utility

Assignee

• Licentia Patent-Verwaltungs-GmbH · DE

Inventors

• Helmut Jorke · Gerstetten, DE
• Johann-Friedrich Luy · Ulm, DE

Key dates

• Filing date: Sep 28, 1987
• Grant date: Aug 15, 1989
• Expiry date: Sep 28, 2007

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/40

Abstract

An IMPATT diode having Si-SiGe heterostructure grown on a Si substrate with the SiGe layer being disposed in the generation zone of the IMPATT diode. The SiGe layer may be replaced by a Si/SiGe superlattice.