Silicon waveguide with monolithically integrated Schottky barrier photodetector
US4857973A · kind A · utility
50Cited by
12References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 1987 |
| Grant date | Aug 15, 1989 |
| Priority date | — |
| Expiry date | May 14, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention comprises a Schottky barrier type infrared photodetector which is monolithically integrated on a silicon waveguide. A Schottky barrier contact is positioned directly on a silicon waveguide to absorb grazing incidence optical signals passing through the waveguide. The Schottky contact is operated in the avalanche or reverse bias mode to generate a useable electrical signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.