Radiation-sensitive semiconductor device with active screening diode
US4857980A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 26, 1988 |
| Grant date | Aug 15, 1989 |
| Priority date | — |
| Expiry date | Jan 26, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A radiation-sensitive semiconductor device has a high-ohmic semiconductor wafer with a thicker edge portion and a thinner central portion, in which a photodiode is located. The surface opposite to the photodiode is provided with a highly-doped contact layer, on which a metal layer is provided. The central portion is so thin that at a low photodiode voltage the depletion zone of the photodiode extends as far as the contact layer. According to the invention, the device includes an active screening diode, which extends both in the edge portion and in the central portion and whose depletion zone extends in the operating condition in the central portion as far as the contact layer. As a result, diffusion of charge carriers from the edge portion to the photodiode is avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.