Thin-film transistor fabrication process
US4859617A · kind A · utility
29Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1988 |
| Grant date | Aug 22, 1989 |
| Priority date | — |
| Expiry date | Jun 3, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a thin-film transistor fabrication process using an amorphous silicon semiconductor layer, after the gate insulation layer is formed and before the a-Si semiconductor layer is formed, the surface of the gate insulation layer is treated with an H.sub.2 plasma. This treatment improves the transistor characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.