Interrupted liquid phase epitaxy process
US4859628A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 1988 |
| Grant date | Aug 22, 1989 |
| Priority date | — |
| Expiry date | Apr 11, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/101
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interrupted liquid phase epitaxy process for producing distributed feedback laser wafers involves epitaxial growth at a first temperature range followed by epitaxial growth at a second higher temperature range. A prior art liquid phase epitaxy process involves a low temperature soak at a temperature of approximately 615 degrees Centrigrade followed by ramped cooling and epitaxial growth of a guiding layer, active layer and confining layer at a temperature of approximately 595 degrees Centigrade. The interrupted liquid phase epitaxy process involves epitaxial growth of a guiding layer in a manner similar to the prior art process, but growth of the guiding layer is followed by a high temperature soak at a temperature of approximately 645 degrees Centrigrade. Ramped cooling follows, with epitaxial growth of the active layer and confining layer taking place at a temperature of approximately 628 degrees Centigrade. Epitaxial growth at the higher temperature reduces difficulties with spinodal decomposition and allows improved control over the amount of phosphorus used in the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.