Solid state image device
US4860076A · kind A · utility
9Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1988 |
| Grant date | Aug 22, 1989 |
| Priority date | — |
| Expiry date | Nov 29, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/191
Abstract
A solid state imaging device comprises a transparent electrode, a photoconductive layer, and a plurality of scanning circuits for consecutively selecting signals in the photoconductive layer. The photoconductive layer is formed of amorphous semiconductor comprising amorphous silicon as the major component and further containing an element serving to lower the capture level within the energy gap and a trace amount of chalcogen element as a chemical modifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.