Quantum well semiconductor laser device
US4860297A · kind A · utility
11Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 1987 |
| Grant date | Aug 22, 1989 |
| Priority date | — |
| Expiry date | Aug 4, 2007 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y20/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In a semiconductor laser device comprising In(Ga.sub.1-x Al.sub.x)P cladding layers and an active region which has one or more In(Ga.sub.1-y Al.sub.y)P (y<x) quantum well layers and which is sandwiched by said cladding layers, superlatticed structures having an altervative lamination of In(Ga.sub.1-x Al.sub.x)P layers and In(Ga.sub.1-y Al.sub.y)P layers are disposed in contact with said cladding layers and/or said quantum well layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.