Method for forming deposited film by generating precursor with halogenic oxidizing agent
US4861623A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1986 |
| Grant date | Aug 29, 1989 |
| Priority date | — |
| Expiry date | Dec 16, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.