Semiconductor device and its manufacturing method
US4862227A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 1989 |
| Grant date | Aug 29, 1989 |
| Priority date | — |
| Expiry date | Jan 17, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device manufactured by removing a part of a semiconductor layer containing an amorphous semiconductor and which is formed over separate electrodes existing on the same substrate and characterized in that the mean oxygen content of the portion of the semiconductor adjacent the removed portion and 10 .mu.m inward is in a range of 0.5-10 atom %, and to a manufacturing method for the semiconductor device characterized in that the semiconductor layer is removed partly in an oxidative environment by the use of laser ray means. The invention provides semiconductor devices diminished in leak current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.