Transistor structure for high temperature logic circuits with insulation around source and drain regions
US4862232A · kind A · utility
20Cited by
23References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 22, 1986 |
| Grant date | Aug 29, 1989 |
| Priority date | — |
| Expiry date | Sep 22, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
Abstract
A high temperature logic field effect transistor. By surrounding the source and drain pn junctions with electrically insulative material, except where a channel runs between the source and drain, a logic field effect transistor whose on/off current ratio can still have a high value at high temperatures. The transistor can be of any standard MOS technology, such as pMOS, nMOS, or CMOS.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.