HgMnCdTe avalanche photodiode
US4862236A · kind A · utility
5Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 1988 |
| Grant date | Aug 29, 1989 |
| Priority date | — |
| Expiry date | Aug 2, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconducting photodiode for detecting light at a predetermined wavelength includes a first semiconducing region having a first conductivity type which is a quaternary alloy of Hg, Mn, Cd, and Te. A second semiconducting region having a second conductivity type electrically contacts the first semiconducting region, such that a semiconducting junction is formed between the first and second regions. The relative proportions of Hg, Mn, and Cd in the first region are selected so that the bandgap energy of the first region is approximately equal to the spin orbit splitting energy of the first region at the desired wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.