Power semiconductor component
US4862239A · kind A · utility
7Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1987 |
| Grant date | Aug 29, 1989 |
| Priority date | — |
| Expiry date | Sep 8, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a power semiconductor component having a so-called "recessed-gate" structure on the cathode side, the large-area control structure consisting of cathode fingers (1) and a lower-lying gate level (2) is divided into a plurality of small-area control zones (25a, 25b) which in each case by themselves are soldered to a cathode block (13a, 13b). This creates high-power components without the possibility of excessive thermal stresses occurring during load cycles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.