Integrated silicon secondary explosive detonator
US4862803A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1988 |
| Grant date | Sep 5, 1989 |
| Priority date | — |
| Expiry date | Oct 24, 2008 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF42B3/13
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A detonator device for a primary or secondary explosive comprising an integrated circuit consisting of a silicon wafer substrate on which an epitaxial layer of a desired thickness is first grown, followed by a covering insulating oxide layer. Metal contacts are deposited on the oxide layer in a photolithographic masking process to form a regular pattern of contact pairs. These contact pairs are joined together by a bridge element which may be made from the same metal as the contacts, a higher density metal, from heavily doped polysilicon. The substrate is back-etched beneath the bridge members up to the epitaxial layer to form a barrel through which the flyer may travel. After the wafer is diced, the individual dies have a counter mass face-plate bonded atop the bridge and contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.