Method of manufacturing self-aligned GaAs MESFET
US4863879A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 16, 1987 |
| Grant date | Sep 5, 1989 |
| Priority date | — |
| Expiry date | Dec 16, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0614
Abstract
A self-aligned MESFET is formed by implanting a first (channel) region in a first surface portion of a gallium arsenide substrate. A dielectric layer is formed on the surface of the substrate and portions of this layer are selectively removed, to leave a relatively thick substitutional gate mesa overlying a first surface portion of the first region and a relatively thin protective portion, contiguous with the substitutional gate, overlying a second surface portion of the first region, so that the substitutional gate has sidewalls extending above the protective portion. Sidewall spacers are formed contiguous with the sidewalls of the substitutional gate, so as to overlie surface portions of the protective portion of the dielectric layer contiguous with the substitutional gate. Ions are implanted into the substrate using the substitutional gate and the sidewall spacers as a mask, thereby forming source and drain regions in the first region. The structure is annealed and the substitutional gate and sidewall spacers are removed. A conductive gate layer is formed on the first region in place of the removed substitutional gate and apertures are formed in the reduced thickness portion of …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.