Thin-film transistor and method of fabricating the same
US4864376A · kind A · utility
66Cited by
5References
5Claims
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Key dates
| Filing date | Jul 22, 1988 |
| Grant date | Sep 5, 1989 |
| Priority date | — |
| Expiry date | Jul 22, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
Abstract
A thin-film transistor comprises a source electrode and a drain electrode formed in a spaced-apart relation to each other on a substrate, a semiconductor layer formed over the source and drain electrodes, a gate insulating film formed on the semiconductor layer and a gate electrode on the gate insulating film. First and second ohmic contact layers are formed in the entirety of the surface regions of the semiconductor layer which are in contact with the source and drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.