Pre-matched module for an ultra-high frequency diode and a process for forming the biasing connection for the diode
US4864384A · kind A · utility
6Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1987 |
| Grant date | Sep 5, 1989 |
| Priority date | — |
| Expiry date | Apr 10, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a process for mounting an ultra-high frequency diode so as to form a pre-matched module. The module of the invention comprises a copper base, a quartz ring and a copper cover: these three parts, coated with gold at least on their facing faces, are assembled together by thermocompression. Inside this case, the diode chip, soldered to the base via a gold heat sink is biased by a false "beam-lead" connection, a metal star whose arms are curved, which reduces the inductance and capacity of this connection with respect to the base. The false "beam-lead" is formed by metalizing a mesa obtained on a silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.