Radiation hardened bipolar static RAM cell
US4864539A · kind A · utility
9Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 15, 1987 |
| Grant date | Sep 5, 1989 |
| Priority date | — |
| Expiry date | Jan 15, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4116
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This invention relates generally to Static Random Access Memory (SRAM) cells and more particularly, relates to a SRAM cell wherein soft-error due to .alpha.-particle radiation is reduced by permitting the potential at the common-emitter node of the cross-coupled transistors of the memory cell to swing freely. Still more particularly, it relates to a SRAM cell wherein the common-emitter node of the cell is decoupled from a heavily capacitively loaded word line with its common constant current source by means of a constant current source or current mirror disposed in each cell between the common-emitter node and the word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.