Process for surface passivation of an indium phosphide substrate and product obtained
US4865656A · kind A · utility
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Key dates
| Filing date | Dec 28, 1987 |
| Grant date | Sep 12, 1989 |
| Priority date | — |
| Expiry date | Dec 28, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Surface passivation of indium phosphide substrate. The process consists in: subjecting the substrate to cleaning without application of ultrasounds, soaking, for a duration of between 30 seconds and 10 minutes, the substrate in an aqueous solution of complex arsenic ions maintained at a temperature of between 0.degree. and 50.degree. C., abundantly rinsing the substrate in deionized water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.