Selective intermixing of layered structures composed of thin solid films
US4865923A · kind A · utility
10Cited by
11References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1988 |
| Grant date | Sep 12, 1989 |
| Priority date | — |
| Expiry date | Mar 7, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Synthetic layered structures, which may be semiconductor structures, are modified, both laterally and vertically, to provide novel electronic, optoelectronic, and optical properties. This is accomplished by selective intermixing of such layered structures through selective irradiation with laser beam or electron beam energy sources to effect interaction between neighboring regions, to a degree dependent on the energy density, while avoiding physical damage to the layered structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.