Positive photoresist material with o-quinone diazide and polymer containing silicon atoms
US4865945A · kind A · utility
11Cited by
6References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 1987 |
| Grant date | Sep 12, 1989 |
| Priority date | — |
| Expiry date | Aug 10, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present application describes a photoresist material which contains organo-silicon groups and the photoresist material is suitable for forming a micropattern applied in the fabrication of semiconductor integrated circuit and magnetic bubble memory elements. The photoresist material possesses high resistance to plasma etching using oxygen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.