Plasma vapor deposition of an improved passivation film using electron cyclotron resonance
US4866003A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 1987 |
| Grant date | Sep 12, 1989 |
| Priority date | — |
| Expiry date | Nov 20, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For enhancement of device stability, there is disclosed a semiconductor device fabricated on a semiconductor substrate comprising (a) source and drain regions formed in a surface portion of the semiconductor substrate and spaced from each other by a channel region, (b) a gate insulating film formed on the channel region, (c) a gate electrode structure formed on the gate insulating film, and (d) a passivation film of an insulating material covering the gate electrode structure and containing hydrogen-bonded-silicons equal in number to or less than 5.times.10.sup.21 per cm.sup.3, and the unstable hydrogen-bonded-silicons are decreased in number so that the semiconductor device only have a decreased trap density which results in stable operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.