Patent · US Expired

Method and apparatus for photodeposition of films on surfaces

US4868005A · kind A · utility

43Cited by
9References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 10, 1988
Grant dateSep 19, 1989
Priority date
Expiry dateMar 10, 2008

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01F41/34
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

The invention relates to visible-laser deposition reactions of metal containing oxyhalide and carbonyl vapors, such as, chromyl chloride vapor, CrO.sub.2 Cl.sub.2, or cobalt carbonyl, Co.sub.2 (CO).sub.8, for direct writing of metal containing opaque patterns on various substrates (Si, SiO.sub.2, GaAs and glass). Deposition at low laser power is by photolysis of adsorbed reactant molecules. Higher powers initiate deposition photochemically and continue it with a combined photolytic/pyrolytic reaction, simultaneously inducing a solid-phase conversion of the deposited film. Mixed Cr.sub.2 O.sub.3 /CrO.sub.2 or cobalt thin films of 1-nanometer to several-micrometer thickness, as well as 1-millimeter-long single crystals of Cr.sub.2 O.sub.3 or cobalt, can be grown with this process, the former at rates up to 3 .mu.m/s. Thin chromium oxide films produced in this manner are strongly ferromagnetic.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.