Device fabrication by X-ray lithography utilizing stable boron nitride mask
US4868093A · kind A · utility
4Cited by
14References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 1, 1987 |
| Grant date | Sep 19, 1989 |
| Priority date | — |
| Expiry date | May 1, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A hydrogen-free boron-containing membrane in tension exhibits advantageous properties for use as a mask in X-ray lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.