Selective epitaxy devices and method
US4868633A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1986 |
| Grant date | Sep 19, 1989 |
| Priority date | — |
| Expiry date | Oct 22, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Selective growth of GaAs and related semiconductors (34) by use of tungsten silicide and related materials for growth masks (36) plus devices incorporating the selective growth plus use of the growth masks as electrical contacts are disclosed. The deposition of semiconductor (38) on such masks (36) is inhibited and single crystal vertical structures (34) grow on unmasked regions of the lattice-matched substrate (32). Variation of the mask (36) composition can vary the inhibited deposition on the mask (36) from small, isolated islands of polycrystalline semiconductor (38) to a uniform layer of polycrystalline semiconductor abutting the single crystal structures. Preferred embodiments include bipolar transistors with the selectively grown structure forming the base and emitter or collector and the mask being the base contact and also include lasers with the vertical structures including the resonant cavities with the mirrors being the sidewalls of the vertical structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.