Method of fabricating single crystal films of cubic group II fluorides on semiconductor componds by molecular beam epitaxy
US4870032A · kind A · utility
6Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Mar 24, 1987 |
| Grant date | Sep 26, 1989 |
| Priority date | — |
| Expiry date | Mar 24, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/169
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The Fluoride crystal has a cubic structure and may be lattice matched or lattice mismatched to the compound semiconductor substrate depending on fluoride composition. These fluoride single crystal layers are put down by a molecular beam epitaxy procedure using certain critical substrate temperature ranges and a particular cleaning procedure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.