Patent · US Expired

Contactless current probe based on electron tunneling

US4870352A · kind A · utility

18Cited by
5References
15Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 5, 1988
Grant dateSep 26, 1989
Priority date—
Expiry dateJul 5, 2008

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/852
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method and apparatus for non-destructive monitoring of the performance parameters of a photodiode prior to integration into a focal plane array are characterized by the use of electron tunneling techniques. The photodiode under test is illuminated with infrared radiation to generate a current therein. The current within the photodiode is measured by a contactless tunnel current probe. The measured current is electrically processed to determine the dynamic resistance and responsitivity of the photodiode in order to evaluate its performance. The apparatus can also be used for testing integrated circuits in the active mode at a plurality of locations.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.