Monolithic temperature compensated voltage-reference diode and method of its manufacture
US4870467A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1985 |
| Grant date | Sep 26, 1989 |
| Priority date | — |
| Expiry date | Aug 6, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/25
Abstract
An improved monolithic, temperature compensated voltage-reference diode is realized by creating a tub of epitaxial semiconductor material in a substrate of opposite conductivity type and creating a voltage reference junction at a surface of the tub. The junction between the tub and the substrate forms the forward-biased, temperature compensating junction of the device. The dopant concentration is varied during growth of the epitaxial material to provide a relatively low resistivity at the voltage-reference junction and a higher resistivity at the temperature compensating junction. The method described offers significant improvement over prior methods of manufacturing such devices in the area of cost and reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.