Doped titanate glass-ceramic for grain boundary barrier layer capacitors
US4870539A · kind A · utility
29Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 17, 1989 |
| Grant date | Sep 26, 1989 |
| Priority date | — |
| Expiry date | Jan 17, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high dielectric constant glass-ceramic material comprising small conducting grains based on BaTiO.sub.3 and/or SrTiO.sub.3 on the order of about 0.5-10.0 .mu.m surrounded by a thin microcrystalline insulating barrier layer at the grain boundary about 0.01-0.10 .mu.m thick wherein the conductivity of the grains is enhanced by addition of about 0.1-4.0 mol % of a dopant selected from among Group V elements, Ge and Si substantially incorporated in the bulk lattice of the grains upon Ti sites. A novel process for forming the glass-ceramic material is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.