Monolithic high density arrays of independently addressable semiconductor laser sources
US4870652A · kind A · utility
48Cited by
6References
4Claims
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Key dates
| Filing date | Jul 8, 1988 |
| Grant date | Sep 26, 1989 |
| Priority date | — |
| Expiry date | Jul 8, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Monolithic high density arrays of independently addressable semiconductor laser emitters or elements are able to be placed in close center-to-center proximity, e.g., on 3-10 .mu.m centers, without experiencing any undesirable phase locking and with minimal amount of electrical and thermal interaction or crosstalk occurring between the independently addressed lasing elements and their independent operation. Such design features are highly suitable for high speed raster output scanner (ROS) and laser printing applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.