Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
US4871690A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1988 |
| Grant date | Oct 3, 1989 |
| Priority date | — |
| Expiry date | Jan 27, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/16
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Different diffusion rates can be made operative relative to diffusion disordering in designated areas of a thin active layer or of quantum well feature compared to thermal disordering in other areas thereof where disordering is not desired by the selective placement of migratory defects in a semiconductor support means, such as a semiconductor substrate or semiconductor support layer for supporting subsequently epitaxially deposited semiconductor layers. Such migratory defects as used herein are intended to include impurities and/or other lattice defects initially introduced into the semiconductor support means prior to epitaxial deposition of semiconductor layers constituting the semiconductor structure, wherein at least one of such layers comprises a thin active layer (i.e., a layer with relative higher refractive index compared to the refractive index of at least contiguous epitaxially deposited layers) not necessarily capable of exhibiting quantum size effects or a quantum well feature capable of exhibiting quantum size effects. These migratory defects diffuse or migrate into subsequently grown epitaxial layers providing regions of higher lattice defects in the epigrown layers …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.