Electron beam apparatus comprising a semiconductor electron emitter
US4871911A · kind A · utility
7Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1987 |
| Grant date | Oct 3, 1989 |
| Priority date | — |
| Expiry date | Jul 17, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/073
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam apparatus comprising a semiconductor electron emitter whose emissive surface dimensions are determined by dimensions of a p-n junction provided in the semiconductor element. By optimizing the dimensions of the emissive surface in relation to the electron-optical properties of the apparatus, an emitter is realized which combines optimum beam formation or imaging with a sufficiently large beam current and a high beam current density as required by the apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.