Analog-to-digital converter made with focused ion beam technology
US4872010A · kind A · utility
18Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1988 |
| Grant date | Oct 3, 1989 |
| Priority date | — |
| Expiry date | Feb 8, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An analog-to-digital converter 10 employs a series of comparators 12, 14, 16 and 18. Each comparator includes at least one inverter consisting of a CMOS transistor pair including a P-channel transistor 22 and N-channel transistor 24. The threshold levels of the transistors 22, 24 are modified using focused ion beam implantation techniques to provide the comparators with monotonically increasing transistion levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.