Method for reducing facet reflectivities of semiconductor light sources and device thereof
US4872180A · kind A · utility
14Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1989 |
| Grant date | Oct 3, 1989 |
| Priority date | — |
| Expiry date | Jun 16, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/5009
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A novel method for reducing the facet reflectivities of semiconductor light sources and amplifiers concerns the use of a bulk (non-waveguiding) index-matched regrown end cap region at both of the major facet surfaces of the amplifier. The amplifier has a tilted stripe geometry which, in combination with the end cap regions, enable the amplifier to reproducibly achieve facet reflectivities of less than 10.sup.-5 while avoiding a facet coating step. The improved optical amplifier is more amenable to mass production and less sensitive to both wavelength and polarization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.