Catalytic deposition of semiconductors
US4873119A · kind A · utility
3Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1987 |
| Grant date | Oct 10, 1989 |
| Priority date | — |
| Expiry date | Jan 28, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/903
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides a method for preparing amorphous semiconductors by (a) activating a semiconductane gas using a activator to produce mononuclear, reactive fragments or gaseous condensation products which serve as precursors for the deposition of an amorphous semiconductor; and (b) controlling the temperature of the activator and the flow rate and temperature of the semiconductane gas so that it does not completely decompose upon the activator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.