Circuit configuration for monitoring a semiconductor structural element and providing a signal when the temperature exceeds a predetermined level
US4875131A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 1989 |
| Grant date | Oct 17, 1989 |
| Priority date | — |
| Expiry date | Apr 25, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A circuit for monitoring the temperature of a semiconductor structural component. The circuit includes a bipolar transistor (1) in thermal contact with a semiconductor structural element to be monitored, and a MOSFET (11) connected in series with a current source (12). The MOSFET (11) is maintained in a nonconducting state with two Zener diodes (13, 14) if the bipolar transistor (1) is the standard operating temperature of the semiconductor structural element. This circuit provides for a reduced zero current signal. The current flowing through the bipolar transistor (1) increases with temperature and the gate-source voltage of the MOSFET (11) is increases until it switches off. If the current flowing through the MOSFET (11) is greater than the impressed current of the current source (12) the potential across the current source takes a step increase a value near the supply voltage (V.sub.DD). This voltage step can then be detected as an excess-temperature signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.